Cool MOS Power Transistor

Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

文件：294.92 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.01 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.08852 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Cool MOS Power Transistor

文件：1.22437 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

Cool MOS Power Transistor

文件：1.01922 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 600V CoolMOS? C3 is 600V CoolMOS? C6/E6 >> Click & go to 600V CoolMOS? C6/E6 \n600V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ·Low specific on-state resistance\n ·(R on*A)\n ·Very low energy storage in output capacitance (E oss) @400V\n ·Low gate charge (Q g)\n ·Fieldproven CoolMOS? quality\n ·CoolMOS? technology has been manufactured by Infineon since 1998;

Infineon

英飛凌

Cool MOS Power Transistor

文件：1.22437 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

Cool MOS Power Transistor

文件：1.01922 Mbytes 頁數(shù)：13 Pages

INFINEON

英飛凌