-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

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INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -2A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

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P-Channel 100 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These t ? -2A, -80V and -100V\n? rDS(ON) = 3.500?\n? Related Literature\n? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards?;

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