-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features

文件：310.39 Kbytes 頁數(shù)：5 Pages

INTERSIL

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

文件：445.58 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.07 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.\nFormerly developmental type TA09046. ? -6A, -80V and -100V\n? rDS(ON) = 0.600?\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Majority Carrier Device\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”?;

Renesas

瑞薩