50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：375.54 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：74.26 Kbytes 頁數(shù)：8 Pages

INTERSIL

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.28532 Mbytes 頁數(shù)：6 Pages

THINKISEMI

思祁半導體

N 溝道，功率 MOSFET，60V，50A，22mΩ

這些N溝道功率MOSFET使用MegaFET工藝制造。 這種工藝使用接近LSI集成電路的特征尺寸，優(yōu)化了硅原料利用率，可以帶來出色的性能。 這些器件設(shè)計用于開關(guān)穩(wěn)壓器、開關(guān)轉(zhuǎn)換器、電機驅(qū)動和繼電器驅(qū)動器等應(yīng)用。 此類晶體管可以直接通過集成電路運行。 以前的開發(fā)類型為TA49018。 ?50A, 60V\n?rDS(ON)= 0.022Ω\n?溫度補償式PSPICE?模型\n?峰值電流與脈寬曲線\n?UIS額定值曲線\n?175°C工作溫度;

ONSEMI

安森美半導體

50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app

文件：412.33 Kbytes 頁數(shù)：8 Pages

INTERSIL

N-Channel 60-V (D-S) MOSFET

文件：979.44 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體