| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFP50N05 | 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r 文件:47.34 Kbytes 頁數(shù):6 Pages | INTERSIL | INTERSIL | |
RFP50N05 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:371.06 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
RFP50N05 | Trans MOSFET N-CH 50V 50A | NJS | NJS | |
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri 文件:51.8 Kbytes 頁數(shù):6 Pages | INTERSIL | INTERSIL | ||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri 文件:376.7 Kbytes 頁數(shù):6 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 文件:157.61 Kbytes 頁數(shù):6 Pages | AUSTIN | AUSTIN | ||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) drivi ? 50A, 50V\n? rDS(ON) = 0.022?\n? UIS SOA Rating Curve (Single Pulse)\n? Design Optimized for 5V Gate Drive\n? Can be Driven Directly from CMOS, NMOS, TTL Circuits\n? Compatible with Automotive Drive Requirements\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer C; | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Maximum Drain Source Voltage:
50V
- Maximum Continuous Drain Current:
50A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
6520 |
詢價 | |||||
INTERSIL |
17+ |
TO-220 |
6200 |
詢價 | |||
HARRIS |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
INTESIL |
23+ |
TO-220 |
8000 |
專做原裝正品,假一罰百! |
詢價 | ||
INTESIL |
2447 |
TO-220 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
HARRIS/哈里斯 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INTERSIL |
2022+ |
to-220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
HARRIS(哈利斯) |
20+ |
TO-220AB |
3000 |
詢價 | |||
FSC |
23+ |
TO-220 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
24+ |
N/A |
57000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 |
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