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    首頁 >RFP50N05>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    RFP50N05

    50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

    These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

    文件:47.34 Kbytes 頁數(shù):6 Pages

    INTERSIL

    RFP50N05

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:371.06 Kbytes 頁數(shù):2 Pages

    ISC

    無錫固電

    RFP50N05

    Trans MOSFET N-CH 50V 50A

    NJS

    NJS

    RFP50N05L

    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

    These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

    文件:51.8 Kbytes 頁數(shù):6 Pages

    INTERSIL

    RFP50N05L

    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

    These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

    文件:376.7 Kbytes 頁數(shù):6 Pages

    FAIRCHILD

    仙童半導(dǎo)體

    RFP50N05L_04

    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

    文件:157.61 Kbytes 頁數(shù):6 Pages

    AUSTIN

    RFP50N05L

    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

    These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) drivi ? 50A, 50V\n? rDS(ON) = 0.022?\n? UIS SOA Rating Curve (Single Pulse)\n? Design Optimized for 5V Gate Drive\n? Can be Driven Directly from CMOS, NMOS, TTL Circuits\n? Compatible with Automotive Drive Requirements\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer C;

    ONSEMI

    安森美半導(dǎo)體

    技術(shù)參數(shù)

    • Maximum Drain Source Voltage:

      50V

    • Maximum Continuous Drain Current:

      50A

    • Configuration:

      Single

    • Channel Type:

      N

    • Channel Mode:

      Enhancement

    • Category:

      Power MOSFET

    供應(yīng)商型號品牌批號封裝庫存備注價格
    24+
    6520
    詢價
    INTERSIL
    17+
    TO-220
    6200
    詢價
    HARRIS
    16+
    TO-220
    10000
    全新原裝現(xiàn)貨
    詢價
    INTESIL
    23+
    TO-220
    8000
    專做原裝正品,假一罰百!
    詢價
    INTESIL
    2447
    TO-220
    100500
    一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
    詢價
    HARRIS/哈里斯
    23+
    TO-220
    50000
    全新原裝正品現(xiàn)貨,支持訂貨
    詢價
    INTERSIL
    2022+
    to-220
    12888
    原廠代理 終端免費(fèi)提供樣品
    詢價
    HARRIS(哈利斯)
    20+
    TO-220AB
    3000
    詢價
    FSC
    23+
    TO-220
    8560
    受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
    詢價
    24+
    N/A
    57000
    一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
    詢價
    更多RFP50N05供應(yīng)商 更新時間2026-1-22 10:21:00

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