2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：35.2 Kbytes 頁數(shù)：5 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：348.11 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 200 V (D-S) MOSFET

文件：1.57598 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Drain Current ID= 2A@ TC=25C

文件：65.019 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Power MOSFET

文件：751.96 Kbytes 頁數(shù)：7 Pages

HMSEMI

華之美半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

文件：867.1 Kbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子