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          首頁(yè) >PTF08>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          PTF08

          General Purpose Relay

          A Miniature Power Relay ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to the LY Series. ■ Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or 100/110 VDC

          文件:300.71 Kbytes 頁(yè)數(shù):13 Pages

          OMRON

          歐姆龍

          PTF080101

          LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

          Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

          文件:64.14 Kbytes 頁(yè)數(shù):4 Pages

          INFINEON

          英飛凌

          PTF080101M

          High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

          Description The PTF080101M is an unmatched 10-watt GOLDMOS? FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical EDGE performance - Average out

          文件:258.49 Kbytes 頁(yè)數(shù):8 Pages

          INFINEON

          英飛凌

          PTF080101S

          Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

          Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

          文件:172.75 Kbytes 頁(yè)數(shù):9 Pages

          INFINEON

          英飛凌

          PTF080101S

          LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

          Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

          文件:64.14 Kbytes 頁(yè)數(shù):4 Pages

          INFINEON

          英飛凌

          PTF080451

          LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

          Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - A

          文件:158.52 Kbytes 頁(yè)數(shù):9 Pages

          INFINEON

          英飛凌

          PTF080451E

          LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

          Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - A

          文件:158.52 Kbytes 頁(yè)數(shù):9 Pages

          INFINEON

          英飛凌

          PTF080601

          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

          Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

          文件:293.73 Kbytes 頁(yè)數(shù):6 Pages

          INFINEON

          英飛凌

          PTF080601A

          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

          Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

          文件:293.73 Kbytes 頁(yè)數(shù):6 Pages

          INFINEON

          英飛凌

          PTF080601E

          LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

          Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output

          文件:293.73 Kbytes 頁(yè)數(shù):6 Pages

          INFINEON

          英飛凌

          詳細(xì)參數(shù)

          • 型號(hào):

            PTF08

          • 制造商:

            OMRON

          • 制造商全稱:

            Omron Electronics LLC

          • 功能描述:

            General Purpose Relay

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          INFINEON
          05/06+
          1086
          全新原裝100真實(shí)現(xiàn)貨供應(yīng)
          詢價(jià)
          OMRON
          2016+
          DIP
          26250
          全新原裝,假一罰十,公司主營(yíng)繼電器!
          詢價(jià)
          INFINEON
          23+
          高頻管
          750
          專營(yíng)高頻管模塊,全新原裝!
          詢價(jià)
          24+
          3000
          公司存貨
          詢價(jià)
          FREESC
          25+
          高頻管
          50
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          INFINEON
          23+
          SOT-502A
          5000
          原裝正品,假一罰十
          詢價(jià)
          英飛凌
          25+
          2789
          全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
          詢價(jià)
          OmronAutomation
          1670
          全新原裝 貨期兩周
          詢價(jià)
          INFINEON
          24+
          SMD
          5500
          長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談
          詢價(jià)
          NA
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價(jià)
          更多PTF08供應(yīng)商 更新時(shí)間2026-1-20 16:11:00
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