General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes 頁數(shù)：27 Pages

OMRON

歐姆龍

General Purpose Relay ??LY

文件：354.93 Kbytes 頁數(shù)：15 Pages

OMRON

歐姆龍

Power-switching Compact General-purpose Relays

文件：9.30035 Mbytes 頁數(shù)：22 Pages

OMRON

歐姆龍

General-purpose Relays and Power Relays Sockets

文件：878.49 Kbytes 頁數(shù)：27 Pages

OMRON

歐姆龍

LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz

Description\nThe PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. ? Broadband internal matching\n? Typical EDGE performance\n? - Average output power = 4.0 W\n? - Gain = 19 dB\n? - Efficiency = 31%\n? Typical CW performance\n? - Output power at P–1dB = 13 W\n? - Gain = 18 dB\n- Efficiency = 55%\n? Integrated ESD protection: Human Body Model, Class 1 (minim;

Infineon

英飛凌

LDMOSRF Power Field Effect Transistor 45 W, 869–960 MHz

Description\nThe PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA? applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. ? Broadband internal matching\n? Typical EDGE performance\n- Average output power = 22.5 W\n- Gain = 18 dB\n- Efficiency = 40%\n? Typical CW performance\n- Output power at P–1dB = 60 W\n- Gain = 17 dB\n- Efficiency = 60%\n? Integrated ESD protection: Human Body Model, Class 1 (minimum)\n? Ex;

Infineon

英飛凌

LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

Infineon

英飛凌

Package：H-32259-2；包裝：帶 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ H-32259-2

INFINEON

英飛凌

包裝：散裝 類別：繼電器 繼電器插座、插槽 描述：RELAY SOCKET 8 POSITION DIN RAIL

Omron Automation and Safety

包裝：散裝 類別：繼電器 繼電器插座、插槽 描述：RELAY SOCKET 8 POSITION DIN RAIL

Omron Automation and Safety