High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Description The PTF080101M is an unmatched 10-watt GOLDMOS? FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features ? Typical EDGE performance - Average out

文件：258.49 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

Description\nThe PTF080101M is an unmatched 10-watt GOLDMOS? FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. ? Typical EDGE performance\n? - Average output power = 5.0 W\n? - Gain = 19 dB\n? - Efficiency = 37%\n? - EVM = 2.0%\n? Typical CW performance\n? - Output Power at P–1dB = 12.5 W\n? - Gain = 18 dB\n? - Efficiency = 50%\n? Integrated ESD protection: Human Body Model Class 1 (minimum)\n? E;

Infineon

英飛凌

Package：10-TFSOP，10-MSOP（0.118"，3.00mm 寬）；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC FET RF LDMOS 10W TSSOP-10

INFINEON

英飛凌

Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

文件：172.75 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ

Description The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features ? Broadband internal matching ? Typical EDGE performance - Average output power

文件：64.14 Kbytes 頁數(shù)：4 Pages

INFINEON

英飛凌