TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

文件：72.66 Kbytes 頁數(shù)：9 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.31 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 60 V (D-S) MOSFET

FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET ? Material categorization:

文件：994.63 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：66.16 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-Channel 60 V (D-S) MOSFET

FEATURES ? 175 °C Junction Temperature ? TrenchFET? Power MOSFET ? Material categorization:

文件：994.62 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.75 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電