PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：59.65 Kbytes 頁數(shù)：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.23 Kbytes 頁數(shù)：2 Pages

ISC

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PowerMOS transistor

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：262.01 Kbytes 頁數(shù)：2 Pages

ISC

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N-CHANNEL LOGIC LEVEL POWER FIELD EFFECT TRANSISTORS

文件：232.26 Kbytes 頁數(shù)：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.18 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電