絲?。?a target="_blank" title="Marking" href="/0406pab/marking.html">0406PAB；Package：LFPAK56；40 V, 6 A PNP high power bipolar transistor

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絲?。?a target="_blank" title="Marking" href="/0406pab/marking.html">0406PAB；Package：SOT669；40 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q 2. Features and benefits ? High thermal power dissipation capability ? Suitable for high temperature applications up to 175 °C ?

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40 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60406NY. ? High thermal power dissipation capability\n? Suitable for high temperature applications up to 175 °C\n? Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n? High energy efficiency due to less heat generation\n? AEC-Q101 qualified;

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40 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60406NY-Q

Nexperia

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Package：SC-100，SOT-669；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 40V 6A LFPAK56 PWRSO8

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