N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 23A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 72mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.08 Kbytes 頁數(shù)：2 Pages

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N-channel TrenchMOS? transistor

GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.FEATURES\n? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? Low thermal resistanceApplications:-\n? d.c. to d.c. converters\n? switched mode power supplie ? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? Low thermal resistanceApplications:-\n? d.c. to d.c. converters\n? switched mode power supplies\n? T.V. and computer monitor power supplies;

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.79 Kbytes 頁數(shù)：2 Pages

ISC

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N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching Applications:- ? d.c. to d.c. converters ? switched mode power supplies ? T.V.

文件：61.65 Kbytes 頁數(shù)：8 Pages

PHI

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