PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：21.14 Kbytes 頁數(shù)：4 Pages

PHI

PHI

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.08657 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

PowerMOS transistor

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.41 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistor Isolated version of PHP4N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

文件：24.89 Kbytes 頁數(shù)：5 Pages

PHI

PHI

N-channel Enhanced mode TO-92/SOT-223 MOSFET

文件：909.37 Kbytes 頁數(shù)：6 Pages

SEMIPOWER

芯派科技