| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PHP3055 | N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Low on-state resistance ? Fast switching 文件：103.08 Kbytes 頁(yè)數(shù)：10 Pages | PHI PHI | PHI | |
N-channel TrenchMOS standard level FET General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only Features and benefits ■ Low conduct 文件：248.27 Kbytes 頁(yè)數(shù)：14 Pages | 恩XP | 恩XP | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：370.98 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’technology ? Low on-state resistance ? Fast switching 文件：103.08 Kbytes 頁(yè)數(shù)：10 Pages | PHI PHI | PHI | ||
PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Po 文件：52.23 Kbytes 頁(yè)數(shù)：7 Pages | PHI PHI | PHI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：371.93 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel TrenchMOS standard level FET General description\nStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic\npackage using TrenchMOS technology. This product is designed and qualified for use in\ncomputing, communications, consumer and industrial applications only.Features and benefits\nLow conduction | 恩XP | 恩XP | ||
PowerMOS transistor Logic level FET | 恩XP | 恩XP |
詳細(xì)參數(shù)
- 型號(hào)：
PHP3055
- 功能描述：
MOSFET RAIL PWRMOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
恩XP |
23+ |
TO-220 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
恩XP |
18+ |
TO-220 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
恩XP |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
PHI |
2023+ |
TO-220 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
恩XP |
22+ |
TO-220 |
90153 |
詢價(jià) | |||
恩XP |
25+ |
TO-TO-220 |
37650 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) | ||
PH |
24+ |
SOT78TO-220AB |
8866 |
詢價(jià) | |||
PHI |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
PHL |
25+ |
TSSOP |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
PHL |
23+ |
TO-220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) |
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