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          首頁 >PHP27NQ10T>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHP27NQ10T

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

          文件:115.89 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          PHP27NQ10T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:371.69 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP27NQ10T

          N-channel TrenchMOS? transistor

          GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.FEATURES\n? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? Low thermal resistanceApplications:-\n? d.c. to d.c. converters\n? switched mode power supplie ? ’Trench’ technology\n? Low on-state resistance\n? Fast switching\n? Low thermal resistanceApplications:-\n? d.c. to d.c. converters\n? switched mode power supplies;

          恩XP

          恩XP

          PHB27NQ10T

          N-channel TrenchMOS standard level FET

          1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits ?

          文件:895.51 Kbytes 頁數(shù):12 Pages

          NEXPERIA

          安世

          PHB27NQ10T

          isc N-Channel MOSFET Transistor

          ·DESCRIPTION ·Drain Current ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose

          文件:303.53 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHB27NQ10T

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

          文件:115.89 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          供應(yīng)商型號品牌批號封裝庫存備注價格
          24+
          3000
          公司存貨
          詢價
          N
          24+
          TO220AB
          5000
          只做原裝公司現(xiàn)貨
          詢價
          恩XP
          23+
          TO-220
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          ON/安森美
          23+
          DPAK
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          PHI
          2022+
          TO-220
          12888
          原廠代理 終端免費提供樣品
          詢價
          N
          25+
          TOTO-220AB
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          恩XP
          24+
          65230
          詢價
          恩XP
          2016+
          TO220
          3000
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          恩XP
          16+
          NA
          8800
          誠信經(jīng)營
          詢價
          恩XP
          25+23+
          TO220
          12435
          絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價
          更多PHP27NQ10T供應(yīng)商 更新時間2026-1-20 16:01:00
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