N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

文件：334.21 Kbytes 頁數(shù)：15 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Low conduc

文件：383.23 Kbytes 頁數(shù)：12 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.82 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：314.97 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP20NQ20T is supplied in the S

文件：103.48 Kbytes 頁數(shù)：9 Pages

PHI

PHI

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES ? High-speed switching ? No secondary breakdown ? Very low on-state resistance. APPLICATIONS ? Motor and actuator driver ? Power management ? Synchronized rectification.

文件：111.35 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Dual P-channel enhancement mode MOS transistor

DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package. FEATURES ? High-speed switching ? No secondary breakdown ? Very low on-state resistance ? Low threshold. APPLICATIONS ? Motor and actuator driver ? Power management ? Synchronized rectif

文件：62.03 Kbytes 頁數(shù)：8 Pages

PHI

PHI

TrenchMOSO transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

文件：65.06 Kbytes 頁數(shù)：8 Pages

PHI

PHI

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

文件：112.45 Kbytes 頁數(shù)：11 Pages

PHI

PHI

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

文件：82.44 Kbytes 頁數(shù)：10 Pages

PHI

PHI