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          首頁(yè) >PHP>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          PHP21N06LT

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

          文件:112.45 Kbytes 頁(yè)數(shù):11 Pages

          PHI

          PHI

          PHI

          PHP21N06LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:371.28 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          PHP21N06LT

          N-channel TrenchMOS? transistor Logic level FET

          FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- ? d.c. to d.c. converters ? swi

          文件:233.59 Kbytes 頁(yè)數(shù):12 Pages

          NEXPERIA

          安世

          PHP21N06T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.23 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          PHP21N06T

          TrenchMOSO transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

          文件:65.06 Kbytes 頁(yè)數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP222

          Dual P-channel enhancement mode MOS transistor

          DESCRIPTION Two P-channel enhancement mode MOS transistors in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES ? Very low on-state resistance ? High-speed switching ? No secondary breakdown ? Low threshold. APPLICATIONS ? Power management ? DC-DC converters ? General purpose switch.

          文件:54.63 Kbytes 頁(yè)數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP222NQ04LT

          N-channel TrenchMOSTM logic level FET

          Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Features ■ Logic level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptible power supplies ■ DC-to-DC converters ■ Ge

          文件:93.75 Kbytes 頁(yè)數(shù):13 Pages

          PHI

          PHI

          PHI

          PHP222NQ04LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.23 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          PHP225

          Dual P-Channel 30-V (D-S) MOSFET

          FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switches

          文件:1.05955 Mbytes 頁(yè)數(shù):9 Pages

          VBSEMI

          微碧半導(dǎo)體

          PHP225

          Nexperia B.V. All rights reserved [NEXPERIA]^1325

          1.1 General description Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features an

          文件:778.52 Kbytes 頁(yè)數(shù):12 Pages

          NEXPERIA

          安世

          技術(shù)參數(shù)

          • 技術(shù)/工藝:

            薄膜

          • 阻值:

            10Ω

          • 精度:

            ±0.1%

          • 功率:

            1W

          • 溫度系數(shù):

            ±25ppm/℃

          • 工作溫度:

            cL

          • 安裝類型:

            SMT

          • 長(zhǎng)x寬/尺寸:

            3.20 x 1.60mm

          • 封裝/外殼:

            bE

          • 引腳數(shù):

            2Pin

          • 是否無(wú)鉛:

            Yes

          • 系列:

            PHP

          • 等級(jí):

            消費(fèi)級(jí)

          • 原始制造商:

            Vishay Intertechnology

          • 原產(chǎn)國(guó)家:

            America

          • 認(rèn)證信息:

            RoHS

          • 存儲(chǔ)溫度:

            cL

          • 元件生命周期:

            Active

          • 高度:

            0.83mm

          • 額定電壓:

            200V

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          更多PHP供應(yīng)商 更新時(shí)間2026-1-21 13:28:00
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