| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier 文件：304.22 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 50mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：372.47 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H 文件：680.64 Kbytes 頁數(shù)：12 Pages | NEXPERIA 安世 | NEXPERIA | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：371.12 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power 文件：57.85 Kbytes 頁數(shù)：7 Pages | PHI PHI | PHI | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08655 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies 文件：21.14 Kbytes 頁數(shù)：4 Pages | PHI PHI | PHI | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08657 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08655 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：371.39 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- 技術(shù)/工藝：
薄膜
- 阻值：
10Ω
- 精度：
±0.1%
- 功率：
1W
- 溫度系數(shù)：
±25ppm/℃
- 工作溫度：
cL
- 安裝類型：
SMT
- 長x寬/尺寸：
3.20 x 1.60mm
- 封裝/外殼：
bE
- 引腳數(shù)：
2Pin
- 是否無鉛：
Yes
- 系列：
PHP
- 等級：
消費(fèi)級
- 原始制造商：
Vishay Intertechnology
- 原產(chǎn)國家：
America
- 認(rèn)證信息：
RoHS
- 存儲溫度：
cL
- 元件生命周期：
Active
- 高度：
0.83mm
- 額定電壓：
200V
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Nexperia |
25+ |
LFPAK56D |
12369 |
樣件支持,可原廠排單訂貨! |
詢價(jià) | ||
THAULAND |
24+ |
SOP8 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅?。?/div> |
詢價(jià) | ||
PHI |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
MINI |
10+ |
DIP8 |
6698 |
詢價(jià) | |||
Mini-Circuits |
2023+ |
A01 |
120 |
專業(yè)銷售MINI電子元件,常年備有大量庫存 |
詢價(jià) | ||
恩XP |
24+ |
TO220 |
5070 |
全新原裝,價(jià)格優(yōu)勢,原廠原包 |
詢價(jià) | ||
PHILPS |
26+ |
SOP8 |
12300 |
代理全系列銷售,全新原裝正品,價(jià)格優(yōu)勢,長期供應(yīng),量大可訂 |
詢價(jià) | ||
NEXPERIA |
19+ |
SOT-669 |
4500 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
恩XP |
23+ |
SOT669 |
2599 |
原廠原裝正品 |
詢價(jià) | ||
PH |
23+ |
TO-220 |
3000 |
原裝正品假一罰百!可開增票! |
詢價(jià) |
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