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          首頁 >PHP21N06>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHP21N06

          TrenchMOSO transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

          文件:65.06 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP21N06

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

          文件:112.45 Kbytes 頁數(shù):11 Pages

          PHI

          PHI

          PHI

          PHP21N06

          TrenchMOSO transistor Standard level FET

          恩XP

          恩XP

          PHP21N06LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 70mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:371.28 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP21N06LT

          N-channel TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

          文件:112.45 Kbytes 頁數(shù):11 Pages

          PHI

          PHI

          PHI

          PHP21N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible Applications: ? d.c. to d.c. co

          文件:82.44 Kbytes 頁數(shù):10 Pages

          PHI

          PHI

          PHI

          PHP21N06LT

          N-channel TrenchMOS? transistor Logic level FET

          FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Logic level compatible GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- ? d.c. to d.c. converters ? swi

          文件:233.59 Kbytes 頁數(shù):12 Pages

          NEXPERIA

          安世

          PHP21N06T

          TrenchMOSO transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters

          文件:65.06 Kbytes 頁數(shù):8 Pages

          PHI

          PHI

          PHI

          PHP21N06T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.23 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP21N06T

          TrenchMOS? transistor Standard level FET

          GENERAL DESCRIPTION\nN-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and

          恩XP

          恩XP

          詳細(xì)參數(shù)

          • 型號:

            PHP21N06

          • 功能描述:

            MOSFET RAIL PWR-MOS

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號品牌批號封裝庫存備注價格
          恩XP
          23+
          TO-220
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          N
          22+
          TO220AB
          6000
          十年配單,只做原裝
          詢價
          PHI
          23+
          TO
          129700
          原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
          詢價
          N
          25+
          TOTO-220AB
          37650
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          PH
          24+
          SOT78TO-220AB
          8866
          詢價
          PHI
          16+
          A
          8000
          原裝現(xiàn)貨請來電咨詢
          詢價
          PHI
          24+
          n
          5989
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          N
          24+
          TO220AB
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價
          恩XP
          1701+
          TO-220
          7500
          只做原裝進(jìn)口,假一罰十
          詢價
          恩XP
          17+
          TO-220
          9888
          全新原裝現(xiàn)貨
          詢價
          更多PHP21N06供應(yīng)商 更新時間2026-1-19 14:56:00
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