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          首頁 >PHP>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHP174NQ04LT

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:371.91 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP176NQ04T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.32 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP18N20E

          PowerMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

          文件:54.15 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHP18N20E

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.34 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP18NQ10T

          N-channel TrenchMOS standard level FET

          1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

          文件:782.47 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          PHP18NQ10T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 90mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.16 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP18NQ10T

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? d.c. to d.c. converters ? switched mode power s

          文件:121.81 Kbytes 頁數(shù):12 Pages

          PHI

          PHI

          PHI

          PHP18NQ11T

          isc N-Channel MOSFET Transistor

          ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 110V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier

          文件:304.27 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          PHP18NQ11T

          N-channel TrenchMOS standard level FET

          1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

          文件:767.83 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          PHP18NQ20T

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:372.55 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術(shù)參數(shù)

          • 技術(shù)/工藝:

            薄膜

          • 阻值:

            10Ω

          • 精度:

            ±0.1%

          • 功率:

            1W

          • 溫度系數(shù):

            ±25ppm/℃

          • 工作溫度:

            cL

          • 安裝類型:

            SMT

          • 長x寬/尺寸:

            3.20 x 1.60mm

          • 封裝/外殼:

            bE

          • 引腳數(shù):

            2Pin

          • 是否無鉛:

            Yes

          • 系列:

            PHP

          • 等級:

            消費級

          • 原始制造商:

            Vishay Intertechnology

          • 原產(chǎn)國家:

            America

          • 認證信息:

            RoHS

          • 存儲溫度:

            cL

          • 元件生命周期:

            Active

          • 高度:

            0.83mm

          • 額定電壓:

            200V

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          更多PHP供應(yīng)商 更新時間2026-1-21 13:26:00
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