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                >PHD20N06T>規(guī)格書列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    PHD20N06T
    N-channel TrenchMOS transistor
    
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS?1 technology.
Features
■ TrenchMOS? technology
■ Low on-state resistance
■ Fast switching.
Applications
■ Switched mode power supplies
■ DC to DC converters
■ General purpose switch.
    文件：307.45 Kbytes 頁(yè)數(shù)：13 Pages
    PHI
    PHI
    PHI
    

    PHD20N06T
    N-channel TrenchMOS standard level FET
    
General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
■ Low conduc
    文件：379.72 Kbytes 頁(yè)數(shù)：12 Pages
    恩XP
    恩XP
    

    PHD20N06T
    isc N-Channel MOSFET Transistor
    
FEATURES
·Drain Current -ID= 18A@ TC=25℃
·Drain Source Voltage -VDSS= 55V(Min)
·Static Drain-Source On-Resistance
-RDS(on) = 77mΩ(Max)@VGS= 10V
DESCRIPTION
·DC-to-DC Converter
·General Industrial Applications
·Power Motor Control
    文件：299.01 Kbytes 頁(yè)數(shù)：2 Pages
    ISC
    無(wú)錫固電
    

    PHD20N06T
    N-Channel 60-V (D-S) MOSFET
    
FEATURES
? TrenchFET? Power MOSFET
? 175 °C Junction Temperature
    文件：896.95 Kbytes 頁(yè)數(shù)：6 Pages
    VBSEMI
    微碧半導(dǎo)體
    

    PHD20N06T
    N-channel TrenchMOS standard level FET
    
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 L
    文件：860.13 Kbytes 頁(yè)數(shù)：12 Pages
    NEXPERIA
    安世
    

    PHD20N06T118
    N-Channel 60-V (D-S) MOSFET
    
FEATURES
? TrenchFET? Power MOSFET
? 175 °C Junction Temperature
    文件：896.97 Kbytes 頁(yè)數(shù)：6 Pages
    VBSEMI
    微碧半導(dǎo)體
    

    PHD20N06T
    PHD20N06T - N-channel TrenchMOS standard level FET 
    N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.  ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;
    Nexperia
    安世
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Package name：
      DPAK
    • Product status：
      Production
    • Channel type：
      N
    • Number of transistors：
      1
    • V_DS [max] (V)：
      55
    • R_DSon [max] @ V_GS = 10 V (mΩ)：
      77
    • T_j [max] (°C)：
      175
    • I_D [max] (A)：
      18
    • Q_GD [typ] (nC)：
      6
    • Q_G(tot) [typ] @ V_GS = 10 V (nC)：
      11
    • P_tot [max] (W)：
      51
    • Q_r [typ] (nC)：
      120
    • V_GSth [typ] (V)：
      3
    • Automotive qualified：
      N
    • C_iss [typ] (pF)：
      316
    • C_oss [typ] (pF)：
      92
    • Date：
      2010-11-13
    
            
    
        
    
            
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