PD85015-E中文資料15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package數(shù)據(jù)手冊ST規(guī)格書

描述 Description

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly.

特性 Features

? Excellent thermal stability
? Common source configuration
? POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V
? Plastic package
? ESD protection
? In compliance with the 2002/95/EC European directive

簡介

PD85015-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由ST制造生產(chǎn)的PD85015-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。