PD84006-E中文資料RF Power LDMOS transistor數(shù)據(jù)手冊ST規(guī)格書

描述 Description

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF ’s superior linearity performance makes it an ideal solution for portable radio and UHF RFID reader. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

特性 Features

Excellent thermal stability
Common source configuration
Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz
Plastic package
ESD protection
In compliance with the 2002/95/EC European directive

簡介

PD84006-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由ST制造生產(chǎn)的PD84006-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。