PD84008-E中文資料RF Power LDMOS transistor數(shù)據(jù)手冊(cè)ST規(guī)格書

描述 Description

The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84008-E’s superior linearity performance makes it an ideal solution for portable radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

特性 Features

Excellent thermal stability
Common source configuration
POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V
Plastic package
ESD protection
In compliance with the 2002/95/EC european directive

簡介

PD84008-E屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由ST制造生產(chǎn)的PD84008-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。