PD84006L-E中文資料RF Power LDMOS transistor數據手冊ST規(guī)格書

描述 Description

The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.
PD84006L-E’s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID reader.

特性 Features

? Excellent thermal stability
? Common source configuration
? Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz
? Plastic package
? ESD protection
? Supplied in tape and reel
? In compliance with the 2002/95/EC european directive

簡介

PD84006L-E屬于分立半導體產品的晶體管-FETMOSFET-射頻。由ST制造生產的PD84006L-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。