RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode a

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：374.07 Kbytes 頁數(shù)：23 Pages

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Package：PowerSO-10 裸露底部焊盤；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ PWRSO-10

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Conductive Hinged Box with Foam

文件：123.05 Kbytes 頁數(shù)：1 Pages

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HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁數(shù)：5 Pages

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RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：131.18 Kbytes 頁數(shù)：16 Pages

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