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          首頁 >NTB>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NTBG080N120SC1

          Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 80 m ? Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) ? Low Effective Output Capacitance (Typ. Coss = 79 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typic

          文件:322.54 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG080N120SC1

          SiC N-Channel MOSFET

          FEATURES ·Low Effective Output Capacitance ·Ultra Low Gate Charge APPLICATIONS ·Main Inverters ·General Purpose Inverters ·DC/DC Converter ·UPS

          文件:387.67 Kbytes 頁數(shù):3 Pages

          ISC

          無錫固電

          NTBG080N120SC1_V01

          Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 80 m ? Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) ? Low Effective Output Capacitance (Typ. Coss = 79 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typic

          文件:322.54 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG080N120SC1_V02

          Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 80 m ? Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) ? Low Effective Output Capacitance (Typ. Coss = 79 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typic

          文件:321.69 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG1000N170M1

          Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 960 m ? Ultra Low Gate Charge (typ. QG(tot) = 14 nC) ? Low Effective Output Capacitance (typ. Coss = 11 pF) ? 100 Avalanche Tested ? RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Electric Storing Systems ? SMPS (

          文件:374.53 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG160N120SC1

          Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 160 m ? Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) ? Low Effective Output Capacitance (typ. Coss = 50.7 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection)

          文件:325.82 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG160N120SC1

          Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 160 m ? Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) ? Low Effective Output Capacitance (typ. Coss = 50.7 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection)

          文件:329.24 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG160N120SC1_V01

          Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 160 m ? Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) ? Low Effective Output Capacitance (typ. Coss = 50.7 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection)

          文件:329.24 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG160N120SC1_V02

          Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 160 m ? Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) ? Low Effective Output Capacitance (typ. Coss = 50.7 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection)

          文件:325.82 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBL023N065M3S

          Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650V, M3S, TOLL

          Features ? Typical RDS(on) = 23 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 69 nC) ? High Speed Switching with Low Capacitance (Coss = 152 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb?Free 2LI (on second level interconnection)

          文件:583.3 Kbytes 頁數(shù):10 Pages

          ONSEMI

          安森美半導(dǎo)體

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          Nexperia
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          23+
          TO-18
          12800
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          24+
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          原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
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          更多NTB供應(yīng)商 更新時(shí)間2026-1-21 16:59:00
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