| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typ 文件：330.93 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? Low Effective Output Capacitance (Coss = 168 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：325.13 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? Low Effective Output Capacitance (Coss = 168 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：324.43 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? Low Effective Output Capacitance (Coss = 168 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：325.13 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 105 nC) ? Low Effective Output Capacitance (Coss = 168 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：324.43 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg060n065sc1/marking.html">BG060N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 44mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 74 nC) ? Low Output Capacitance (Coss = 133 pF) ? 100 Avalanche Tested ? TJ = 175°C ? RoHS Compliant Typical Applications ? SMPS (Switching Mode Power Supplies) ? Solar Inve 文件：314.65 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L Features ? Typ. RDS(on) = 60 m @ VGS = 15 V ? Typ. RDS(on) = 43 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 88 nC) ? High Speed Switching with Low Capacitance (Coss = 115 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?F 文件：794.72 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L Features ? Typ. RDS(on) = 60 m @ VGS = 15 V ? Typ. RDS(on) = 43 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 88 nC) ? High Speed Switching with Low Capacitance (Coss = 115 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?F 文件：794.72 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲印：BG070N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 65mohm, 1200V, M3S, D2PAK-7L Features ? Typ. RDS(on) = 65 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 57 nC) ? High Speed Switching with Low Capacitance (Coss = 57 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical A 文件：229.5 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, D2PAK-7L Features ? Typ. RDS(on) = 80 m ? Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) ? Low Effective Output Capacitance (Typ. Coss = 79 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typic 文件：321.69 Kbytes 頁(yè)數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Nexperia |
25+ |
8-HTSSOP |
7734 |
樣件支持,可原廠排單訂貨! |
詢價(jià) | ||
Nexperia |
25+ |
8-HTSSOP |
7786 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
NICC |
2447 |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
NICC |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
NICC |
25+ |
SMD |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
NIC |
2022+ |
NA |
10000 |
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。 |
詢價(jià) | ||
NICC |
24+ |
SMD |
60000 |
詢價(jià) | |||
NICC |
2450+ |
SMD |
9850 |
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
NIC Components |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價(jià)格 現(xiàn)貨或訂貨 |
詢價(jià) | ||
原廠原包 |
24+ |
原裝 |
38560 |
原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同 |
詢價(jià) |
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