| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Power MOSFET 75 Amps, 60 Volts, N?Channel TO?220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? These Devices are Pb?Free and are RoHS Compliant ? NTBV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change R 文件：176.99 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Power MOSFET 75 AMPERES, 60 VOLTS RDS(on) = 9.5 m? Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features ? Pb?Free Packages are Available Typical Applications ? Power Supplies ? Converters ? P 文件：79.45 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg014n120m3p/marking.html">BG014N120M3P；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET ??14mohm, 1200V, M3, D2PAK-7L Features ? Typ. RDS(on) = 14 m ? Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) ? 100 Avalanche Tested Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? UPS (Uninterruptible Power Supplies) ? Energy Storage Systems ? SMPS (Switch Mode Power Supplies) 文件：149.97 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L Features ? Typ. RDS(on) = 14 m ? Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) ? 100 Avalanche Tested Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? UPS (Uninterruptible Power Supplies) ? Energy Storage Systems ? SMPS (Switch Mode Power Supplies) 文件：333.4 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 14mohm, 1200V, M3, D2PAK-7L Features ? Typ. RDS(on) = 14 m ? Low Switching Losses (Typ. EON 1331 J at 74 A, 800 V) ? 100 Avalanche Tested Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? UPS (Uninterruptible Power Supplies) ? Energy Storage Systems ? SMPS (Switch Mode Power Supplies) 文件：333.4 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? Low Effective Output Capacitance (Coss = 424 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：329.52 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg015n065sc1/marking.html">BG015N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? Low Effective Output Capacitance (Coss = 424 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：303.61 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? Low Effective Output Capacitance (Coss = 424 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：303.61 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 283 nC) ? Low Effective Output Capacitance (Coss = 424 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (o 文件：329.52 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L Features ? Typ. RDS(on) = 20 m @ VGS = 15 V ? Typ. RDS(on) = 16 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 200 nC) ? Low Effective Output Capacitance (Coss = 295 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second lev 文件：325.98 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Nexperia |
25+ |
8-HTSSOP |
7734 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
Nexperia |
25+ |
8-HTSSOP |
7786 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
NICC |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NICC |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NICC |
25+ |
SMD |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NIC |
2022+ |
NA |
10000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | ||
NICC |
24+ |
SMD |
60000 |
詢價 | |||
NICC |
2450+ |
SMD |
9850 |
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
NIC Components |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價格 現(xiàn)貨或訂貨 |
詢價 | ||
原廠原包 |
24+ |
原裝 |
38560 |
原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同 |
詢價 |
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