| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L Features ? Typ. RDS(on) = 22 m ? Ultra Low Gate Charge (QG(tot) = 151 nC) ? High Speed Switching with Low Capacitance (Coss = 146 pF) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible 文件：324.94 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L Features ? Typical RDS(ON) = 23 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 69 nC) ? High Speed Switching with Low Capacitance (Coss = 153 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb?Free 2LI (on Second Level Interconnection) 文件：342.49 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg025n065sc1/marking.html">BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L Features ? Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 164 nC) ? Low Output Capacitance (Coss = 278 pF) ? 100 Avalanche Tested ? TJ = 175°C ? RoHS Compliant Typical Applications ? SMPS (Switching Mode Power Supplies) ? Solar Inv 文件：218.62 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg028n170m1/marking.html">BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L Features ? Typ. RDS(on) = 28 m ? Ultra Low Gate Charge (typ. QG(tot) = 222 nC) ? Low Effective Output Capacitance (typ. Coss = 200 pF) ? 100 Avalanche Tested ? RoHS Compliant Typical Applications ? UPS ? DC/DC Converter ? Boost Converter 文件：240.67 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg030n120m3s/marking.html">BG030N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L Features ? Typ. RDS(on) = 29 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 107 nC) ? High Speed Switching with Low Capacitance (Coss = 106 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typical 文件：232.84 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L Features ? Typical RDS(ON) = 32 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 55 nC) ? High Speed Switching with Low Capacitance (Coss = 113 pF) ? 100% Avalanche Tested ? This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb?Free 2LI (on Second Level Interconnection) 文件：468.1 Kbytes 頁數(shù)：9 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/bg040n120m3s/marking.html">BG040N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L Features ? Typ. RDS(on) = 40 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(TOT) = 75 nC) ? High Speed Switching with Low Capacitance (COSS = 80 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb?Free 2LI (on Second Level Interconnection) Typical A 文件：335.85 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typ 文件：330.93 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typ 文件：333.69 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features ? Typ. RDS(on) = 40 m ? Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) ? Low Effective Output Capacitance (Typ. Coss = 139 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typ 文件：333.69 Kbytes 頁數(shù)：8 Pages | ONSEMI 安森美半導體 | ONSEMI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Nexperia |
25+ |
8-HTSSOP |
7734 |
樣件支持,可原廠排單訂貨! |
詢價 | ||
Nexperia |
25+ |
8-HTSSOP |
7786 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
NICC |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NICC |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NICC |
25+ |
SMD |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NIC |
2022+ |
NA |
10000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | ||
NICC |
24+ |
SMD |
60000 |
詢價 | |||
NICC |
2450+ |
SMD |
9850 |
只做原廠原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價 | ||
NIC Components |
23+ |
TO-18 |
12800 |
原裝正品代理商最優(yōu)惠價格 現(xiàn)貨或訂貨 |
詢價 | ||
原廠原包 |
24+ |
原裝 |
38560 |
原裝進口現(xiàn)貨,工廠客戶可以放款。17377264928微信同 |
詢價 |
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