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          首頁 >NTB>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NTBG020N090SC1_V01

          Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m @ VGS = 15 V ? Typ. RDS(on) = 16 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 200 nC) ? Low Effective Output Capacitance (Coss = 295 pF) ? 100 Avalanche Tested ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second lev

          文件:325.98 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG020N120SC1

          Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (QG(tot) = 220 nC) ? High Speed Switching with Low Capacitance (Coss = 258 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi

          文件:349.03 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG020N120SC1

          Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (QG(tot) = 220 nC) ? High Speed Switching with Low Capacitance (Coss = 258 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi

          文件:346.77 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG020N120SC1_V01

          Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (QG(tot) = 220 nC) ? High Speed Switching with Low Capacitance (Coss = 258 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi

          文件:349.03 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG020N120SC1_V02

          Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, D2PAK-7L

          Features ? Typ. RDS(on) = 20 m ? Ultra Low Gate Charge (QG(tot) = 220 nC) ? High Speed Switching with Low Capacitance (Coss = 258 pF) ? 100 Avalanche Tested ? TJ = 175°C ? This Device is Halide Free and RoHS Compliant with exemption 7a, Pb?Free 2LI (on second level interconnection) Typi

          文件:346.77 Kbytes 頁數(shù):7 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG022N120M3S

          SiC N-Channel MOSFET

          FEATURES ·Typ. RDS(on) = 960 mΩ ·100 Avalanche Tested ·RoHS Compliant APPLICATIONS ·Solar Inverters ·Electric Vehicle Charging Stations ·Uninterruptible Power Supplies (UPS) ·Energy Storage Systems ·Switch Mode Power Supplies (SMPS)

          文件:391.46 Kbytes 頁數(shù):4 Pages

          ISC

          無錫固電

          NTBG022N120M3S

          絲?。?a target="_blank" title="Marking" href="/bg022n120m3s/marking.html">BG022N120M3S;Package:D2PAK-7L;MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

          Features ? Typ. RDS(on) = 22 m ? Low switching losses (Typ. EON 485 J at 40 A, 800 V) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible Power Supplies (UPS) ? Energy Storage Systems

          文件:227.68 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG022N120M3S

          Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

          Features ? Typ. RDS(on) = 22 m ? Ultra Low Gate Charge (QG(tot) = 151 nC) ? High Speed Switching with Low Capacitance (Coss = 146 pF) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible

          文件:324.94 Kbytes 頁數(shù):8 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG022N120M3S

          Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

          Features ? Typ. RDS(on) = 22 m ? Low switching losses (Typ. EON 485 J at 40 A, 800 V) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible Power Supplies (UPS) ? Energy Storage Systems

          文件:326.59 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

          NTBG022N120M3S_V01

          Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

          Features ? Typ. RDS(on) = 22 m ? Low switching losses (Typ. EON 485 J at 40 A, 800 V) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible Power Supplies (UPS) ? Energy Storage Systems

          文件:326.59 Kbytes 頁數(shù):9 Pages

          ONSEMI

          安森美半導(dǎo)體

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          更多NTB供應(yīng)商 更新時間2026-1-20 10:49:00
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