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          首頁 >NP1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          NP100P06PLG-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID

          文件:189.76 Kbytes 頁數(shù):7 Pages

          NEC

          瑞薩

          NP109N04PUG

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:345.32 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NP109N04PUG

          MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? High current rating ID(DC) = ±110 A

          文件:235.02 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NP109N04PUG-E1-AY

          MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? High current rating ID(DC) = ±110 A

          文件:235.02 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NP109N04PUG-E2-AY

          MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

          DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? High current rating ID(DC) = ±110 A

          文件:235.02 Kbytes 頁數(shù):8 Pages

          NEC

          瑞薩

          NP109N04PUJ

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:345.46 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          NP109N04PUJ

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low input capacitance Ciss = 6900 pF TYP. ? Designed for automotive applicati

          文件:318.16 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NP109N04PUJ-E1B-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low input capacitance Ciss = 6900 pF TYP. ? Designed for automotive applicati

          文件:318.16 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NP109N04PUJ-E2B-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low input capacitance Ciss = 6900 pF TYP. ? Designed for automotive applicati

          文件:318.16 Kbytes 頁數(shù):10 Pages

          RENESAS

          瑞薩

          NP109N04PUK

          MOS FIELD EFFECT TRANSISTOR

          Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 m? MAX. ( VGS = 10 V, ID = 55 A ) ? Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ? Designed for automotive application and

          文件:917.26 Kbytes 頁數(shù):8 Pages

          RENESAS

          瑞薩

          技術(shù)參數(shù)

          • 額定電壓范圍(V.DC):

            6.3~25

          • 額定靜電容量范圍(μF):

            10~2500

          • 工作溫度范圍(°C):

            -55~105

          • 壽命(Hrs):

            2000

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          24+
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          2500
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          16+
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          8000
          原裝現(xiàn)貨請(qǐng)來電咨詢
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          更多NP1供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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