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          首頁(yè) >NP1>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NP109N04PUK

          MOS FIELD EFFECT TRANSISTOR

          Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:234.32 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N04PUK_V01

          MOS FIELD EFFECT TRANSISTOR

          Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 m? MAX. ( VGS = 10 V, ID = 55 A ) ? Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ? Designed for automotive application and

          文件:917.26 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N04PUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:234.32 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N04PUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 m? MAX. ( VGS = 10 V, ID = 55 A ) ? Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ? Designed for automotive application and

          文件:917.26 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N04PUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 m? MAX. ( VGS = 10 V, ID = 55 A ) ? Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ? Designed for automotive application and

          文件:917.26 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N04PUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:234.32 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N055PUJ

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:345.26 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NP109N055PUK

          MOS FIELD EFFECT TRANSISTOR

          Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 2.2 m? MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ? Designed for automotive application an

          文件:269.08 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N055PUK

          MOS FIELD EFFECT TRANSISTOR

          Description The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.2 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V) ● Designed for automotive application

          文件:109.71 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP109N055PUK

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:344.57 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          技術(shù)參數(shù)

          • 額定電壓范圍(V.DC):

            6.3~25

          • 額定靜電容量范圍(μF):

            10~2500

          • 工作溫度范圍(°C):

            -55~105

          • 壽命(Hrs):

            2000

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          24+
          50
          詢價(jià)
          NEC
          23+
          TO-252
          1000
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          1415+
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          28500
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          ON
          SMB
          4200
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          25+
          SOP-8
          6000
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          三和
          24+
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          50
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          ELGENELECTR
          24+
          原裝進(jìn)口原廠原包接受訂貨
          2500
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          NEC
          16+
          TO-263-7
          8000
          原裝現(xiàn)貨請(qǐng)來(lái)電咨詢
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          NEC
          2016+
          TO263-7
          6292
          只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
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          更多NP1供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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