| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID(D 文件：191.11 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID( 文件：191.09 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss = 文件：1.35852 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID( 文件：191.09 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss = 文件：1.35852 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID( 文件：191.09 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID 文件：189.76 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss = 文件：1.36064 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance : RDS(on) = 6.0 m? Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m? Max. ( VGS = -4.5 V, ID = -50 A ) ? Low input capacitance : Ciss = 文件：1.36064 Mbytes 頁數(shù)：8 Pages | RENESAS 瑞薩 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = ?10 V, ID = ?50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = ?4.5 V, ID = ?50 A) ? High current rating: ID 文件：189.76 Kbytes 頁數(shù)：7 Pages | NEC 瑞薩 | NEC |
技術(shù)參數(shù)
- 額定電壓范圍(V.DC)：
6.3~25
- 額定靜電容量范圍(μF)：
10~2500
- 工作溫度范圍(°C)：
-55~105
- 壽命(Hrs)：
2000
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
50 |
詢價(jià) | |||||
NEC |
23+ |
TO-252 |
1000 |
全新原裝的現(xiàn)貨 |
詢價(jià) | ||
NEC |
1415+ |
TO-252(DPAK) |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價(jià) | ||
17+ |
DO214AASMB |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | |||
ON |
SMB |
4200 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
NP |
25+ |
SOP-8 |
6000 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價(jià) | ||
三和 |
24+ |
引線電解電容 |
50 |
大量原裝現(xiàn)貨供應(yīng) |
詢價(jià) | ||
ELGENELECTR |
24+ |
原裝進(jìn)口原廠原包接受訂貨 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
NEC |
16+ |
TO-263-7 |
8000 |
原裝現(xiàn)貨請來電咨詢 |
詢價(jià) | ||
NEC |
2016+ |
TO263-7 |
6292 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) |
相關(guān)規(guī)格書
更多- UNE5532
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074
- TL074A
- TL074-EP
- TL074H
- SN65LVDT3486AD
- PS9307L2
- PS9332L
- PS9313L
- PS9307AL
- PS9351L2
- PS9331L
- PS9303L
- PS9307AL2
- PS9332L2
- PS9305L2
- PS9324L
- PS9308L
- PS9317L
- PS9324L
相關(guān)庫存
更多- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- TD62308
- TD62308APG
- TD62308AFG
- TL074
- TL074
- TL074
- TL074B
- TL074M
- SN65LVDT3486B
- PS9351L
- PS9317L2
- PS9313L2
- PS9309L2
- PS9308L2
- PS9306L2
- PS9305L
- PS9352AL2
- PS9306L
- PS9307L
- PS9303L2
- PS9331L2
- PS9309L
- PS9324L2
- PS9309L
