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          首頁(yè) >NP1>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NP110N04PUJ-E1B-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low input capacitance Ciss = 9500 pF TYP. ? Designed for automotive applicati

          文件:318.28 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NP110N04PUJ-E2B-AY

          MOS FIELD EFFECT TRANSISTOR

          DESCRIPTION The NP110N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ? Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) ? Low input capacitance Ciss = 9500 pF TYP. ? Designed for automotive applicati

          文件:318.28 Kbytes 頁(yè)數(shù):10 Pages

          RENESAS

          瑞薩

          NP110N04PUK

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 1.4 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive applicatio

          文件:113.76 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.4 m? MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:271.53 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:345.03 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          NP110N04PUK_V01

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.4 m? MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:271.53 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.4 m? MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:271.53 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK-E1-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 1.4 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive applicatio

          文件:113.76 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 1.4 mΩ MAX. (VGS = 10 V, ID = 55 A) ● Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive applicatio

          文件:113.76 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          NP110N04PUK-E2-AY

          MOS FIELD EFFECT TRANSISTOR

          Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ? Super low on-state resistance RDS(on) = 1.4 m? MAX. (VGS = 10 V, ID = 55 A) ? Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) ? Designed for automotive application

          文件:271.53 Kbytes 頁(yè)數(shù):8 Pages

          RENESAS

          瑞薩

          技術(shù)參數(shù)

          • 額定電壓范圍(V.DC):

            6.3~25

          • 額定靜電容量范圍(μF):

            10~2500

          • 工作溫度范圍(°C):

            -55~105

          • 壽命(Hrs):

            2000

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          更多NP1供應(yīng)商 更新時(shí)間2026-1-20 16:01:00
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