N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：66.55 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.06 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：66.47 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：66.55 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體