| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NDB6060 | N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a 文件：360.67 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
NDB6060 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 48A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：345.02 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | |
NDB6060 | N-Channel Enhancement Mode Field Effect Transistor | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：400.62 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching p 文件：360.51 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor 文件：513.57 Kbytes 頁數(shù)：13 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N-Channel 60-V (D-S) MOSFET 文件：986 Kbytes 頁數(shù)：8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI |
詳細(xì)參數(shù)
- 型號：
NDB6060
- 功能描述：
MOSFET N-CH 60V 48A TO-263AB
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
D2PAK(TO-263) |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
FAIRCHILD |
05+ |
原廠原裝 |
11674 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
LM |
16+ |
TO-263 |
10000 |
全新原裝現(xiàn)貨 |
詢價 | ||
FAIRCHI |
23+ |
TO-263 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
FSC |
18+ |
TO-263 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價 | ||
FAIRCHILD/仙童 |
25+ |
TO-263 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Fairchild/ON |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
FAIRCHILD |
01+ |
TO-263 |
2025 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-263-3,D2Pak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
FAIRCHILD |
23+ |
TO-263 |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 |
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