Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N & P-Channel Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and

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FAIRCHILD

仙童半導(dǎo)體

N- and P-Channel 60V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC

文件：595.68 Kbytes 頁數(shù)：10 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/01ck/marking.html">01CK；Package：SOT23-6；N- and P-Channel 60 V (D-S) MOSFET

APPLICATIONS Replace Digital Transistor, Level-Shifter Power Supply Converter Circuits Battery Operated Systems

文件：1.51844 Mbytes 頁數(shù)：4 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/.01/marking.html">.01；Package：TSOT-23-6；Field Effect Transistor - Dual, N & P-Channel, Enhancement Mode

文件：363.11 Kbytes 頁數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

雙 N 和 P 溝道增強型場效應(yīng)晶體管，60V

雙N&P溝道邏輯電平增強模式場效應(yīng)晶體管采用了飛兆半導(dǎo)體專有的高單元密度、DMOS技術(shù)。 這一密度非常高的工藝是專為最大限度地降低通態(tài)電阻，提供穩(wěn)固和可靠的性能以及快速開關(guān)而定制的。 此類器件特別適合低壓、低電流、開關(guān)和電源應(yīng)用。 ?Q1： 0.51A，60V\n?Q2： -0.34A，60V\n?高飽和電流\n?采用高密度單元設(shè)計，可實現(xiàn)極低的RDS(ON)。\n?專有SuperSOTTM-6封裝設(shè)計采用銅引腳架構(gòu)，以獲得出色的熱性能和電氣性能;

ONSEMI

安森美半導(dǎo)體