Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These dual P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fas

文件：259 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

Dual P-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? Compliant to RoHS Directive 2002/95/EC

文件：497.64 Kbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/03pl/marking.html">03PL；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

Product Summary Vdss=60V ID= 0.5A Rps(oNn)=1.7Q@VGs=-10V

文件：3.19294 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

MOSFET - Dual P-Channel, POWERTRENCH

文件：285.28 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

雙 P 溝道增強型場效應(yīng)晶體管 -60V，-0.34A，5Ω

這些雙P溝道增強模式功率場效應(yīng)晶體管采用飛兆專有的Trench技術(shù)生產(chǎn)。 這一密度非常高的工藝是專為最大限度地降低通態(tài)電阻，提供穩(wěn)固和可靠的性能以及快速開關(guān)而定制的。 該產(chǎn)品特別適合需要低電流高邊開關(guān)的低電壓應(yīng)用。 ?0.34 A，50 V。\n?RDS(ON) = 5 Ω @ VGS = -10 V\n?RDS(ON) = 7 Ω @ VGS = -4.7 V\n?低柵極電荷\n?快速開關(guān)速度\n?高性能溝道技術(shù)可實現(xiàn)極低的RDS(ON)\n?SuperSOT? -6封裝： 小尺寸（比標準SO-8小72%）；薄型（1mm厚）。;

ONSEMI

安森美半導(dǎo)體