Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fas

文件：258.25 Kbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance a

文件：308.47 Kbytes 頁數(shù)：7 Pages

UMW

友臺半導(dǎo)體

SOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor

Features 0.51A, 50V, RDS(ON) = 2W @ VGS=10V High density cell design for low RDS(ON). Proprietary SOT23-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.

文件：301.19 Kbytes 頁數(shù)：7 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/02nf/marking.html">02Nf；Package：SOT23-6；50V Dual N-Channel Enhancement Mode MOSFET

文件：1.66584 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

Field Effect Transistor - Dual, N-Channel, Enhancement Mode

文件：335.81 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

雙 N 溝道增強(qiáng)型場效應(yīng)晶體管，50V，0.51A，2Ω

這些雙N溝道增強(qiáng)模式功率場效應(yīng)晶體管采用飛兆專有的高單元密度、DMOS技術(shù)生產(chǎn)。 這一密度非常高的工藝是專為最大限度地降低通態(tài)電阻，提供穩(wěn)固和可靠的性能以及快速開關(guān)而定制的。 這些器件特別適合需要低電流高邊開關(guān)的低電壓應(yīng)用。 ?0.51 A，50 V。RDS(ON) = 2 Ω @ VGS = 10 V。\n?采用高密度單元設(shè)計(jì)，可實(shí)現(xiàn)極低的RDS(ON)。\n?專有SuperSOTTM-6封裝設(shè)計(jì)采用銅引腳架構(gòu)，以獲得出色的熱性能和電氣性能。\n?高飽和電流。;

ONSEMI

安森美半導(dǎo)體