TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：301.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

恩XP

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N-Channel Enhancement-Mode Silicon Gate

TMOS E?FET Power Field Effect Transistor N?Channel Enhancement?Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage?blocking capability without degrading performance over time. In addition, this advanced TMOS E?FET is designed to withstand hi

文件：112.23 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

N-Channel 650 V (D-S) MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.08666 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

Power Field Effect Transistor

文件：215.56 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導體

Power Field Effect Transistor

ONSEMI

安森美半導體