TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time.

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MOTOROLA

摩托羅拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

TMOS E-FET Power Field Effect Transistor\nN–Channel Enhancement–Mode Silicon GateThis advanced high–voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed

恩XP

1-Line High Power TVS Diode

Features 5400W peak pulse power (8/20 Low leakage: nA level Low operating voltage: 12V Ultra low clamping voltage One power line protects Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-4 (EFT) 80A (5/50ns)

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LEIDITECH

雷卯電子

1-Line High Power TVS Diode

Features Ultra low leakage: nA level Operating voltage: 12V Low clamping voltage Complies with following standards: — |EC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV —IEC61000-4-5 (Lightning) 200A (8/20us) RoHS Compliant

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TECHPUBLIC

臺(tái)舟電子