TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

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MOTOROLA

摩托羅拉

TMOS V Power Field Effect Transistor

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHMN–Channel Enhancement–Mode Silicon Gate\nTMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our\n50 and 60 volt TMOS

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM

TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on)= 0.04 OHM N–Channel Enhancement–Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50

文件：188.8 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

N-Channel 60 V (D-S) MOSFET

文件：1.31361 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N??hannel Power MOSFET

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ONSEMI

安森美半導(dǎo)體

N?Channel Power MOSFET

ONSEMI

安森美半導(dǎo)體