P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -2.0A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · Bridge circuits · Power Stitching

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Power MOSFET 2 Amps, 500 Volts

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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

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摩托羅拉

Power MOSFET 2 Amps, 500 Volts

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Power MOSFET 2 Amps, 500 Volts

文件：193.31 Kbytes 頁數(shù)：7 Pages

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Power MOSFET -500V -2A 6 Ohm Single P-Channel TO-220

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a ? Robust High Voltage Termination\n? Avalanche Energy Specified\n? Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n? Diode is Characterized for Use in Bridge Circuits\n? IDSS and VDS(on) Specified at Elevated Temperature\n? Pb-Free Package is Available;

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Power MOSFET 2 Amps, 500 Volts

ONSEMI

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