HIGH VOLTAGE POWER MOSFET N-CHANNEL

[SEMICONDUCTOR TECHNOLOGY, INC.] HIGH VOLTAGE POWER MOSFET N-CHANNEL CASE OUTLINE: TO-220

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? Silicon Gate for Fast Switching Speeds — Switching Tim

文件：125.02 Kbytes 頁數(shù)：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB

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