The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A

文件：200.01 Kbytes 頁數(shù)：8 Pages

MOTOROLA

摩托羅拉

RF POWER FIELD EFFECT TRANSISTORS

2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETsN–Channel Enhancement–Mode Lateral MOSFETs\nDesigned for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class

恩XP

Network Expansion Module

文件：148.01 Kbytes 頁數(shù)：3 Pages

JDSU

捷迪訊

Network Expansion Module

文件：148.01 Kbytes 頁數(shù)：3 Pages

JDSU

捷迪訊

Network Expansion Module

文件：148.01 Kbytes 頁數(shù)：3 Pages

JDSU

捷迪訊