NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF317is Designed for Class C, 28 V High Band Applications up to 200 MHz. FEATURES: ? Internal Input Matching Network ? PG= 9.0 dB at 100 W/150 MHz ? Omnigold? Metalization System

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ASI

The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V

Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. ? Guaranteed performance at 150 MHz, 28 Vdc Output power = 100 W Minimum gain = 9.0 dB ? Built–in matching network for broadband operation ? 100 tested for load mismatch at all phase angl

文件：220.2 Kbytes 頁數(shù)：6 Pages

MA-COM

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line ???????NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB ? Built–In Matching Network for Broadband

文件：115.2 Kbytes 頁數(shù)：6 Pages

MOTOROLA

摩托羅拉

The RF Line NPN Silicon RF Power Transistor

The RF Line ???????NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range. ? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB ? Built–In Matching Network for Broadband

文件：144.53 Kbytes 頁數(shù)：5 Pages

MACOM

NPN Silicon RF power transistor

Description: MRF317 is designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.

文件：46.11 Kbytes 頁數(shù)：2 Pages

ELEFLOW

The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V

文件：220.2 Kbytes 頁數(shù)：6 Pages

MA-COM

The RF Line NPN Silicon RF Power Transistors

100 W, 30 – 200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON? Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB\n? Built–In Matching Network for Broadband Operation\n? 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR\n? Gold Metall

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI MRF317is Designed for Class C, 28 V High Band Applications up to 200 MHz.\n\nFEATURES:\n? Internal Input Matching Network\n? PG= 9.0 dB at 100 W/150 MHz\n? Omnigold? Metalization System

ASI Semiconductor

Trans RF BJT NPN 35V 12A 4-Pin Case 316-01

NJS

Package：316-01；包裝：托盤 類別：分立半導體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：TRANS RF NPN 35V 12A 316-01

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