NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASI MRF377is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment. FEATURES: ?PG= 16.5 dB min. at 45 W/860 MHz ? η = 21 Minimum ?

文件：39.02 Kbytes 頁數(shù)：1 Pages

ASI

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 32 volt digital television transmitter equipment. ? Typical B

文件：1.03228 Mbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nTheASI MRF377is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. Ideal for large-signal, common source amplifier in 32 V digital television transmitter equipment.\nFEATURES:\n?PG= 16.5 dB min. at 45 W/860 MHz\n? η = 21 % Minimum\n? Omnigold? Met

ASI Semiconductor

470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET

OverviewMRF377, MRF377R3 and MRF377R5 removed from active portfolio. Possible Replacement Part: MRF377HR3 or MRF377HR5. \n?Typical Broadband DVBT OFDM Performance @ 470–860 MHz, 32 Volts,\nIDQ = 2.0 A, 8K Mode, 64 QAM\nOutput Power: 45 Watts Avg.\n\tPower Gain ≥ 16.7 dB\n\tEfficiency ≥ 21%\n\tACPR ≤ –58 dBc\n\n?Typical Broadband ATSC 8VSB Performance @ 470–860 MHz,32 Volts,\nIDQ = 2.0 A\nOutput Power: 80 Watts Av;

恩XP

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

文件：781.69 Kbytes 頁數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 3

文件：781.69 Kbytes 頁數(shù)：16 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 32 volt digital television transmitter equipment. ? Typical B

文件：1.03228 Mbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF POWER FIELD EFFECT TRANSISTOR

Designed for broadband commercial and industrial applications with frequen cies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large?signal, common source amplifier applications in 32 volt digital television transmitter equipment. ? Typical B

文件：1.03228 Mbytes 頁數(shù)：12 Pages

MOTOROLA

摩托羅拉

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes 頁數(shù)：14 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：787.26 Kbytes 頁數(shù)：14 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體