LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications. ? Guaranteed Performance @ 1.6 GHz, 28 Volts Output Power = 10 Watts Minimum Gain = 9.5 dB @ 10 Watts Minimum Efficiency = 45 @ 10 Watts ? High Gain, Rugged Device ? Bottom Side

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MOTOROLA

摩托羅拉

10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB, CW amplifier applications.? Guaranteed Performance @ 1.6 GHz, 28 Volts\n?? Output Power = 10 Watts\n?? Minimum Gain = 9.5 dB @ 10 Watts\n?? Minimum Efficiency = 45% @ 10 Watts\n? High Gain, Rugged Device\n? Bottom Sid

恩XP

30.0 A Switchmode Power Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * Low Power Loss，High Efficiency * Ultrafast 35 and 60 Nanosecond Recovery times

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LUGUANG

魯光電子

30.0 AMPS. Super Fast Rectifiers Reverse Voltage: 100 to 600 Volts Forward Current:30.0 Amperes

Features Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Dual rectifier construction, positive center-tap Glass passivated chip junctions Low power loss, high efficiency Superfast recovery time, high voltage Low forward voltage, high current capability Low th

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LUGUANG

魯光電子

Photo Diode

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MARKTECH